Atom-scale model could help improve material growth for advanced electronics
Summary
Penn State researchers have refined an atom-scale model of how silicon carbide changes from a solid into vapor during crystal growth, work that could help manufacturers produce higher-quality material for advanced electronics while reducing costly trial-and-error experiments.
Description from Phys.
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Atom-scale model could help improve material growth for advanced electronics
Penn State researchers have refined an atom-scale model of how silicon carbide changes from a solid into vapor during crystal growth, work that could help manufacturers produce higher-quality material for advanced electronics while reducing costly trial-and-error experiments.
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